Mid-gap trap state-mediated dark current in organic photodiodes

Interface Trap States in Organic Photodiodes

Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several cm(2), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of or...

Nanostructured organic photodiodes

Drift dominated InP/GaP photodiodes

We present InP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown, processed and characterized. The excellent spectral response, higher than 75% internal quantum efficiency in UV and visible range, demonstrates the robustness of our...

Investigation of Dark Current Shot Noise in CdS/CuInSe2-Photodiodes with a Lock-in Technique

A very Jow noise measurement system is described with a noise temperature of 0.5 K consisting of a mercury wetted reed switch, low noise preamplifier, and synchronous detector. The set-up can te tuned from 20 kHz up to 3.15 GHz corresponding to the bandwidth of relay and prcamplifieI'. The shot noise of CdSjCulnSe2-photodiode,s has been investigated. Deviations from the expected behaviour indic...

High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30lm diameter devices exhibited leakage current below 3fA under reverse bias up t...